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| IT2009 2 - 26.5 GHz High-Gain, High-Power Amplifier Description The IT2009 is a broadband GaAs MMIC traveling wave amplifier designed for high output power applications where high gain performance is also required. The IT2009 provides saturated output power of 1 W up to 7 GHz and greater than 29 dBm up to 15 GHz. High gain of 20 dB with flatness of +/-1 dB is provided up to 26.5 GHz. DC power consumption as low as 5.4 W is obtained by biasing for best output power and good linear performance. Input-output DC block capacitors are integrated on-chip. Frequency range: 2 GHz - 26.5 GHz Psat (2 GHz - 7 GHz): 30 dBm Psat (7 GHz - 15 GHz): 29 dBm Psat (15 GHz - 26.5 GHz): 25 dBm Gain with +/-1dB flatness: 20 dB DC power consumption: 5.4 W DC bias conditions: 9 V at 600 mA Full chip passivation for high reliability VGG1 Features www..com IN OUT VGG2 VDD Absolute Ratings Symbol Parameters/conditions Positive supply voltage Negative supply voltage DC positive supply current Negative supply current RF input power DC power dissipation (no RF) Operating channel temperature Mounting temperature (30 s) Storage temperature Min. -2 Max. 11 0 1300 1.6 17 10 150 320 150 Units V V mA mA dBm W C C C VDD VGG1,2 IDQ IGG1,2 Pin Pdiss_DC Tch Tm Tst -65 Recommended Operating Conditions Symbol Tb VDD VGG1 VGG2 IDQ Parameters/conditions Operating temperature range (back side) Positive bias spply Negative bias spply Negative bias supply DC supply drain current Min. -40 -0.4 -0.4 Typ. Max. 85 9 -0.9 -0.9 750 Units o C V V V mA -0.6 -0.6 600 For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 1 IT2009 2 - 26.5 GHz High-Gain, High-Power Amplifier Electrical Characteristics (at 25 C) 50 ohm system VDD = +9 V Quiescent current IDQ = 600 mA Symbol BW S21 S11 S22 S12 Psat Parameters/conditions Frequency range Small signal ain Gain flatness Input return loss Output return loss Isolation Saturated output power (3 dB gain comp.) 2 - 10 GHz 2 - 20 GHz 2 - 26.5 GHz Output power at 1 dB gain compression point 2 - 10 GHz 2 - 20 GHz 2 - 26.5 GHz Min. 2 17 12 9 50 27.5 26.5 24 27 26 22.5 Typ. 20 +/-1 16 12 Max. 26.5 Units GHz dB dB dB dB dB dBm dBm dBm dBm dBm dBm www..com 29.5 28.5 25 29 28 24.5 P1dB Thermal Characteristics Symbol Parameters/conditions Rth_jb Thermal resistance junction-backside of die NO RF: DC bias VDD =9 V, IDD=600 mA , PDC =5.4 W Tbase=70 C Rth_jb Thermal resistance junction-backside of die RF applied: Saturated power 1 W, VDD =9 V, Pdiss=7 W Tbase=70 C Rth_jb (oC/W) Tch (oC) 5 97.0 MTFF (h) >> +1E7 5 105.0 >> +1E7 Chip Layout and Bond Pad Locations Pinout and Pad Dimensions: (Back of chip is RF and DC ground) P2 P1: RF input (100 x 150 mm2) P2: VGG1, negative voltage (150 x 100 mm2) P3: VGG2, negative voltage (150 x100 mm2) P3 P4 P5 P4: VDD positive voltage (250 x 100 mm2) P5: RF output (100 x150 mm2) P1 Note: All dimensions are in millimeters Chip size tolerance: 20 m Chip thickness: 4 mil with a tolerance of 0.4 mil. For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 2 IT2009 2 - 26.5 GHz High-Gain, High-Power Amplifier Recommended Assembly Diagram Bypass capacitor must be large enough to isolate bias supply (=>10 F) www..com VGG1 100uF VGG2 VDD For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 3 IT2009 2 - 26.5 GHz High-Gain, High-Power Amplifier Performance Data T = 25o C Measured data includes effect of two parallel RF input/output bond wires S21 (dB) Small Signal Gain, VDD=9V, IDQ=600mA 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 Freq. (GHz) 20 22 24 26 28 10 5 0 -5 S11 (dB) -10 -15 -20 -25 -30 -35 -40 2 Input Return loss, VDD=9V, IDQ=600mA www..com 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Freq. (GHz) 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 -36 -40 2 4 6 Output Return loss, VDD=9V, IDQ=600mA Gain vs. Drain Bias VDD, IDQ=600mA 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 4 6 S22 (dB) S21 (dB) Vd=9V Vdd=8V Vdd=7V 8 10 12 14 16 18 20 22 24 26 28 30 Freq. (GHz) 8 10 12 14 16 18 20 22 24 26 28 Freq. (GHz) Gain vs. Temperature, VDD =9V 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 4 6 S21 (dB) Tbase=0C Tbase=25C Tbase=50C Tbase=70C 8 10 12 14 16 18 20 22 24 26 28 Freq. (GHz) For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 4 IT2009 2 - 26.5 GHz High-Gain, High-Power Amplifier Saturated Power, VDD=9V, IDQ=600mA 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 2 4 6 8 10 12 14 16 18 20 22 24 26 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 2 4 6 8 10 12 14 16 18 20 22 24 26 Performance Data T = 25o C Psat(dBm) P1dB, VDD=9V, IDQ=600mA www..com Freq. (GHz) P1dB(dBm) Freq. (GHz) P1dB vs. VDD, IDQ=600mA 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 2 4 6 8 10 12 14 62 59 56 53 50 47 44 41 38 35 32 29 26 23 20 2 Output Third Order Intercept Point VDD=9V, IDQ=600mA VDD=9V OIP3(dBm) 22 24 26 P1dB(dBm) VDD=8V 16 18 20 Freq. (GHz) 4 6 8 10 12 14 16 18 20 22 24 26 Freq. (GHz) * Measured data includes effect of two parallel RF input/output bond wires For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 5 IT2009 2 - 26.5 GHz High-Gain, High-Power Amplifier Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (VGG1,2) WHILE CORRESPONDING DRAIN VOLTAGE (Vdd) IS PRESENT CAN DAMAGE THE AMPLIFIER. The following procedure must be considered to properly test the amplifier. The IT2009 amplifier is biased with a positive drain supply (VDD) and two negative gate supply (VGG1 and VGG2). The recommended bias conditions for the IT2009 is VDD= 9.0V, IDQ = 600mA. To achieve this drain current level, VGG1 and VGG2 are typically biased between -0.6V and -0.9V. The gate voltages (VGG1 and VGG2) MUST be applied prior to the drain voltage (VDD) during power up and removed after the drain voltage is removed during the power down. 1. 2. 3. 4. Apply -1.1 V to VGG1 Apply -1.1V to VGG2 Apply +9 V to VDD Adjust VGG1 and VGG2 to attain IDQ = 600 mA total current (VGG1 = VGG2 , typically biased between -0.6 V and -0.9 V) Bias Procedure www..com Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325 C for 15 min. Die attachment for power devices should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mil wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 12 mil long corresponding to a typical 2 mil gap between the chip and the substrate material. For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, e-mail: sales@gigoptix.com, or visit our site at www.GigOptix.com. 6 |
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